1 CMPA0060025D 25 w, 20 mhz - 6.0 ghz, gan mmic, power amplifer crees CMPA0060025D is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic enables very wide bandwidths. rev 1.2 C december 2014 pn: CMPA0060025D typical performance over 1.0-6.0 ghz (t c = 25?c) parameter 1.0 ghz 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz units gain 18.0 18.0 18.5 18.0 17.0 17.0 db output power @ p in 32 dbm 34 38 42 29 30 31 w associated gain @ p in 32 dbm 13.3 13.9 14.2 12.6 13.1 12.9 db pae @ p in 32 dbm 54 45 46 33 34 33 % note: v dd = 50 v, i d = 500 ma features ? 18 db small signal gain ? 30 w typical p sat ? operation up to 50 v ? high breakdown voltage ? high temperature operation ? size 0.157 x 0.094 x 0.004 inches applications ? ultra broadband amplifers ? test instrumentation ? emc amplifer drivers subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units drain-source voltage v dss 84 vdc gate-source voltage v gs -10, +2 vdc storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 12 ma thermal resistance, junction to case (packaged) 1 r jc 3.0 ?c/w input power 2 p in 36 dbm note1 eutectic die attach using 80/20 ausn solder mounted to a 10 mil thick cumo carrier. note 2 limit for internal resistor only. thermal dissipation may be exceeded at this level. electrical characteristics (frequency = 20 mhz to 6.0 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage 1 v (gs)th -3.8 -3.0 -2.7 v v ds = 20 v, ?i d = 6 ma gate quiescent voltage v (gs)q C -2.7 C vdc v dd = 50 v, i dq = 500 ma saturated drain current 2 i ds C 12 C a v ds = 12.0 v, v gs = 2.0 v rf characteristics small signal gain s21 C 18 C db v dd = 50 v, i dq = 500 ma input return loss s11 C 9 C db v dd = 50 v, i dq = 500 ma output return loss s22 C 7 C db v dd = 50 v, i dq = 500 ma output power, 1 p out1 17 29 C w v dd = 50 v, i dq = 500 ma, p in = 32 dbm, freq = 4.0 ghz output power, 2 p out2 23 30 C w v dd = 50 v, i dq = 500 ma, p in = 32 dbm, freq = 5.0 ghz output power, 3 p out3 23 31 C w v dd = 50 v, i dq = 500 ma, p in = 32 dbm, freq = 6.0 ghz power added effciency, 1 pae1 18 33 C % v dd = 50 v, i dq = 500 ma, p in = 32 dbm, freq = 4.0 ghz power added effciency, 2 pae2 23 34 C % v dd = 50 v, i dq = 500 ma, p in = 32 dbm, freq = 5.0 ghz power added effciency, 3 pae3 22 33 C % v dd = 50 v, i dq = 500 ma, p in = 32 dbm, freq = 6.0 ghz power gain g p C 13 C db v dd = 50 v, i dq = 500 ma, p in = 32 dbm output mismatch stress vswr C C 5 : 1 y no damage at all phase angles, v dd = 50 v, i dq = 500 ma, p in = 32 dbm notes: 1 the device will draw approximately 55-70 ma at pinch off due to the internal circuit structure. 2 scaled from pcm data. 3 all data pulsed with pulse width at 10s, 1% duty cycle 3 data measured into a 15 db output load with a maximum return loss. CMPA0060025D rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 die dimensions (units in microns) overall die size 3990 x 2400 (+0/-50) microns, die thickness 100 (+/-10) micron. all gate and drain pads must be wire bonded for electrical connection. pad number function description pad size (microns) 1 rf in 1 rf-input pad. matched to 50 ohm. requires gate control from an external bias Ct from -2.3 v to -3.8 v. 150 x 200 2 gate termination off chip termination for the gate. it needs to be dc-blocked . 200 x 150 3 rf out 1 rf-output pad. matched to 50 ohm. requires drain supply from an external bias Ct up to 50 v , 2.0 a 150 x 200 notes: 1 the rf in and out pads have a ground-signal-ground confguration with a pitch of 75 microns. die assembly notes: ? recommended solder is ausn (80/20) solder. refer to crees website for the eutectic die bond procedure application note at www.cree.com/wireless. ? vacuum collet is the preferred method of pick-up. ? the backside of the die is the source (ground) contact. ? die back side gold plating is 5 microns thick minimum. ? thermosonic ball or wedge bonding are the preferred connection methods. ? gold wire must be used for connections. ? test pad must be bonded to ground. ? use the die label (xx-yy) for correct orientation. CMPA0060025D rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 functional block diagram this device employs a wideband amplifer topology. it has an internal termination for the gate, which works well over 1.0-6.0 ghz. for operation below 1.0 ghz an external termination is required. this termination needs to be dc- blocked and suitable to withstand up to 2 w of rf power. (refer to the reference design section for the lf-termination in this data sheet for more details). the circuits also require external wideband bias Cts to supply voltage to the gate and drain. the bias-t at the drain needs to be designed to handle 50 v and up to 2.0 a. figure 1. dc rf rf & dc 1 2 3 biastee dc rf rf & dc 12 3 biastee 12 1 2 1 2 vg vd gate termination rf in rf out CMPA0060025D rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 external termination reference design the following is a plot of the gain of the die with and without an rc reference circuit. notes: 1 an off chip termination is needed to reduce the high gain peak at low frequencies. 2 the off chip termination should be designed to minimize the impact on the mmics performance at higher frequencies. rc reference circuit the reference circuit is a series capacitor and resistor as shown below. figure 2. the resistor needs to handle 2.0 w. c = 2200pf rg = 5 20 25 30 35 gai n ( d b ) cmpa0060025 gain with and without lf termination no lf termination ref rf termination 0 5 10 15 0.0 1.0 2.0 3.0 4.0 5.0 6.0 gai n ( d b ) frequency (ghz) CMPA0060025D rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 typical performance power gain vs frequency power output vs frequency p in = 32 dbm p in = 32 dbm \ power added effciency vs frequency gain and return losses vs frequency p in = 32 dbm v dd = 50 v, i dq = 500 ma electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c 12 13 14 15 gai n ( d b ) associated gain vs frequency pin = 32 dbm 50v 40v 8 9 10 11 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 gai n ( d b ) frequency (ghz) 44 45 46 47 ou t p u t po w er ( d b m) power output vs frequency pin = 32 dbm 50v 40v 40 41 42 43 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 ou t p u t po w er ( d b m) frequency (ghz) 45 50 55 60 p a e( % ) power added efficiency vs frequency pin = 32 dbm 50v 40v 20 25 30 35 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 p a e( % ) frequency (ghz) 5 10 15 20 25 5 10 15 20 25 s1 1 ( d b ) , s22 ( d b ) s21 ( d b ) CMPA0060025D small signal response, v dd =50v, i dq =500ma s21 s11 s22 -25 -20 -15 -10 -5 0 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 s1 1 ( d b ) , s22 ( d b ) s21 ( d b ) frequency (ghz) CMPA0060025D rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/wireless sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA0060025D rev 1.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
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